Author:
Hu Xiao,Wu Dingyi,Zhang Hongguang,Chen Daigao,Wang Lei,Xiao Xi,Yu Shaohua
Abstract
We present our recent progress on the silicon photonic devices for next-generation optical interconnects. The 300 Gbit/s silicon microring modulator, 200 Gbit/s Ge EAM and 408 Gbit/s Ge-Si photodetector with the highest bandwidth of 110 GHz are presented. Single-chip 1.6 Tbit/s silicon-based optical transceiver is also demonstrated.
Cited by
2 articles.
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1. PAM4 Symbol Recognition based on Spiking Neural Network for 200Gb/s on-chip IM/DD Optical Interconnection;2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings (ACP/POEM);2023-11-04
2. Performance Analysis of Silicon-Based Optical Coherent Transceiver Chip in S-Band Based on Standard 400 G Modulation Format;2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings (ACP/POEM);2023-11-04