Temperature-Insensitive pulse and 120℃ CW Operation of 1550nm-Band p-doped InAs/InGaAlAs Quantum Dot Lasers on InP(311)B Substrate-Reference-Cited by-同舟云学术

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Temperature-Insensitive pulse and 120℃ CW Operation of 1550nm-Band p-doped InAs/InGaAlAs Quantum Dot Lasers on InP(311)B Substrate

Published:2023 Issue: Volume: Page:
ISSN:
Container-title:Optical Fiber Communication Conference (OFC) 2023
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Author:

Yabuki Ryota,Matsumoto Atsushi,Katsuhara Ryumi,Heinsalu Siim,Akahane Koichi,Matsushima Yuichi,Ishikawa Hiroshi,Utaka Katsuyuki

Abstract

We fabricated 1550nm-band, p-doped, InAs/InGaAlAs quantum-dot (QD) lasers on an InP(311)B substrate. The device showed extremely high temperature stability and lasing up to 120℃ was confirmed under CW condition.

Publisher

Optica Publishing Group

Reference9 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. High Performance InAs/${\rm In}_{0.53}{\rm Ga}_{0.23}{\rm Al}_{0.24}{\rm As}$/InP Quantum Dot 1.55 $\mu{\rm m}$ Tunnel Injection Laser

3. Experimental investigation of chirp properties induced by signal amplification in quantum-dot semiconductor optical amplifiers

4. Gain characteristics and femto-second optical pulse response of 1550nm-band multi-stacked QD-SOA grown on InP(311)B substrate

5. Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers

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