Author:
Cheng Ning,Ban Dechao,Zheng Xuezhe
Abstract
A high-power (>100mW) semiconductor laser is demonstrated with a small far-field divergence of 9.3° × 17.6°. Under a ‐19.8dB back-reflection, this laser exhibits little changes in relative intensity noise and almost no power penalty for 53Gbd/s PAM4 transmission.
Cited by
1 articles.
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