Affiliation:
1. China Jiliang University
2. Zhejiang University
Abstract
Modified near-ballistic uni-traveling-carrier photodiodes with improved overall performances were studied theoretically and experimentally. A bandwidth up to 0.2 THz with a 3 dB bandwidth of 136 GHz and large output power of 8.22 dBm (99 GHz) under the −2V bias voltage were obtained. The device exhibits good linearity in the photocurrent-optical power curve even at large input optical power, with a responsivity of 0.206 A/W. Physical explanations for the improved performances have been made in detail. The absorption layer and the collector layer were optimized to retain a high built-in electric field around the interface, which not only ensures the smoothness of the band structure but also facilitates the near-ballistic transmission of uni-traveling carriers. The obtained results may find potential applications in future high-speed optical communication chips and high-performance terahertz sources.
Funder
National Natural Science Foundation of China
Natural Science Foundation of ZheJiang Province
Open Funds from the National Key Laboratory of Application Specific Integrated Circuit
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering