Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board-Reference-Cited by-同舟云学术

Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board

Published:2021-08-05 Issue:16 Volume:46 Page:3853
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Zubov Fedor^ORCID,Maximov Mikhail^ORCID,Moiseev Eduard^ORCID,Vorobyev Alexandr,Mozharov Alexey,Berdnikov Yuri^ORCID,Kaluzhnyy Nikolay,Mintairov Sergey^ORCID,Kulagina Marina,Kryzhanovskaya Natalia^ORCID,Zhukov Alexey^ORCID

Funder

Russian Science Foundation

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference25 articles.

1. GaAs epitaxy on Si substrates: modern status of research and engineering

2. Growth of high quality GaAs layers on Si substrates by MOCVD

3. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

4. Anti-domain-free GaP, grown in atomically flat (001) Si sub-μm-sized openings

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