Photoresistors of the 2–15 μm spectral range based on Cd_xHg_1−xTe heteroepitaxial structures obtained by molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Photoresistors of the 2–15 μm spectral range based on Cd_xHg_1−xTe heteroepitaxial structures obtained by molecular-beam epitaxy

Published:2016-09-01 Issue:9 Volume:83 Page:543
ISSN:1070-9762
Container-title:Journal of Optical Technology
language:en
Short-container-title:J. Opt. Technol.

Author:

Filatov A. V.,Susov E. V.,Kuznetsov N. S.,Karpov V. V.

Publisher

The Optical Society

Subject

Applied Mathematics,Computational Mathematics,General Engineering,Atomic and Molecular Physics, and Optics

Reference5 articles.

1. Energy gap versus alloy composition and temperature in Hg1−xCdxTe

2. Molecular beam epitaxy of high quality Hg1 − Cd Te films with control of the composition distribution

3. Long-term stability of photoresistors for the spectral range 8-12μm, fabricated from heteroepitaxial CdHgTe structures obtained by molecular-beam epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoresistors from heteroepitaxial structures n-CdxHg1-xTe with exclusion of charge carriers within the 3–5 µm spectral range;Journal of Optical Technology;2020-12-01

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