Gain Characteristics of InAs/InP Quantum Dash Semiconductor Optical Amplifiers between S-and C-bands-Reference-Cited by-同舟云学术

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Gain Characteristics of InAs/InP Quantum Dash Semiconductor Optical Amplifiers between S-and C-bands

Published:2020 Issue: Volume: Page:
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Container-title:OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF)
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Author:

Liu Guocheng,Wang Shurui,Lu Zhenguo,Liu Jiaren,Poitras Daniel,Rahim Mohamed,Barrios Pedro,Jiang Weihong,Pakulski Grzegorz,Poole Philip J.

Publisher

OSA

Reference6 articles.

1. Quantum dot semiconductor optical amplifiers at 1.3 µm for applications in all-optical communication networks

2. Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

3. Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon

4. InP based lasers and optical amplifiers with wire-/dot-like active regions

5. Growth of InAs/InP-based quantum dots for 1.55μm laser applications

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