Affiliation:
1. Institute for Quantum Electronics
Abstract
We present improved thermal management of an optically-pumped vertical
external cavity surface emitting laser (VECSEL) at a center wavelength
of around 2 µm. This was achieved with a
backside-cooled, InGaSb-based VECSEL using a hybrid
metal-semiconductor Bragg reflector. We demonstrate the fabrication of
such a hybrid metal-semiconductor mirror by combining a copper mirror
with 10.5 AlAs0.08Sb0.92/GaSb distributed Bragg
reflector (DBR) pairs. Together with a thin 20 nm
SiO2 diffusion barrier we reach >99.9 %
reflectivity at 2 µm. This allows for a thinner gain
chip design compared to the standard DBR requiring 19.5 layer pairs.
The structure thickness was reduced from 7.5 µm to
4.7 µm lowering the thermal resistance of the device
from (2.79±0.16) K W−1 to
(2.12±0.19) K W−1. We
demonstrate record high average continuous wave (cw) output powers of
3 W for backside-cooled InGaSb-based VECSELs.
Funder
European Research Council
Subject
Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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