Resonant Avalanche Photodiodes fabricated in a Silicon-on-Insulator foundry platform for Red and NIR Photo Detection-Reference-Cited by-同舟云学术

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Resonant Avalanche Photodiodes fabricated in a Silicon-on-Insulator foundry platform for Red and NIR Photo Detection

Published:2024 Issue: Volume:12 Page:QW3A.44
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Container-title:Quantum 2.0 Conference and Exhibition
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Author:

Miklaucich James A.,Balram Krishna C.

Abstract

Two narrowband (λ = 637 nm, λ = 800 nm) SOI foundry-fabricated APDs are reported. In a first for this platform, a Guided Mode Resonance grating is used to enhance the absorptance by 16x.

Publisher

Optica Publishing Group

Reference4 articles.

1. Integrated avalanche photodetectors for visible light

2. Excess noise factor measurement for low-noise high-speed avalanche photodiodes

3. Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors

4. (INVITED)A review on dielectric resonant gratings: Mitigation of finite size and Gaussian beam size effects

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