UV-enhanced photorefractive response rate in a thin-film lithium niobate microdisk

Abstract

The photorefractive (PR) effect plays a critical role in emerging photonic technologies, including dynamic volume holography and on-chip all-optical functionalities. Nevertheless, its slow response rate has posed a significant obstacle to its practical application. Here, we experimentally demonstrate the enhancement of the PR response rate in a high-Q thin-film lithium niobate (TFLN) microdisk under UV light irradiation. At an irradiation intensity of 30 mW/cm2, the PR effect achieves a high response bandwidth of approximately 256 kHz. By employing this UV-assisted PR effect, we have achieved rapid laser-cavity locking and self-stabilization, where perturbations are automatically compensated. This technique paves the way toward real-time dynamic holography, editable photonic devices on a lithium niobate platform, and high-speed all-optical information processing.