Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells-Reference-Cited by-同舟云学术

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Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells

Published:2019-09-03 Issue:10 Volume:9 Page:3941
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Liang Feng,Zhao Degang,Jiang Desheng,Liu Zongshun,Zhu Jianjun,Chen Ping,Yang Jing,Zhang Liqun

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference21 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap

3. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

4. GaN-based green laser diodes

5. Recent improvement in nitride lasers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The role of InGaN quantum barriers in improving the performance of GaN-based laser diodes;Optics & Laser Technology;2022-01

2. Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer;Materials Today Communications;2021-12

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