Investigation on the p-type formation mechanism of nitrogen ion implanted ZnO thin films induced by rapid thermal annealing-Reference-Cited by-同舟云学术

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Investigation on the p-type formation mechanism of nitrogen ion implanted ZnO thin films induced by rapid thermal annealing

Published:2019-06-24 Issue:7 Volume:9 Page:3098
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Huang Zheng,Ruan Haibo,Zhang Hong,Shi Dongping,Li Wanjun,Qin Guoping,Wu Fang,Fang Liang,Kong Chunyang

Funder

National Natural Science Foundation of China (NSFC)

Scientific and Technological Research Program of Chongqing Municipal Education Commission

the opening project of Chongqing Key Laboratory of Micro /Nano Materials Engineering and Technology

Natural Science Foundation of Chongqing

China Postdoctoral Science Foundation

Chongqing University of Arts and Sciences (CUAS)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference54 articles.

1. Electrical properties of bulk ZnO

2. Transparent Conducting Oxides for Photovoltaics

3. Yield issues on the fabrication of 30cm×30cm-sized Cu(In,Ga)Se-based thin-film modules

4. Transparent conducting oxide films for thin film silicon photovoltaics

5. High rate direct current magnetron sputtered and texture-etched zinc oxide films for silicon thin film solar cells

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2. Quasilinear Kane conduction band model in nitrogen-doped indium tin oxide;Physical Review B;2024-03-05

3. Mechanism of converting n-type to p-type conductivity in ZnO nanorods array films co-implanted with nitrogen and lithium ions;Materials Science and Engineering: B;2023-12

4. Insights into Effects of Annealing Environment on the Changes in Structural Properties and Electrochemical Performance of Nitrogen‐Doped Zinc Oxide Nanosheets;physica status solidi (a);2023-05-23

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