Author:
Yang Ji Sook,Jung Sung Hyeon,Cho Hyung Koun
Abstract
We built photonic synapse thin-film transistor (TFT) devices consisting of a-IGZO bottom with low conductivity and a-IZO top with rapid carrier transport. This device showed a very low initial post-synaptic current by achieving a full depletion at a low negative VG and improved synaptic current amplitude for memory retention.