Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime-Reference-Cited by-同舟云学术

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Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime

Published:2015-04-01 Issue:4 Volume:2 Page:335
ISSN:2334-2536
Container-title:Optica
language:en
Short-container-title:Optica

Author:

Desiatov Boris,Goykhman Ilya,Mazurski Noa,Shappir Joseph,Khurgin Jacob B.,Levy Uriel

Funder

Israel Strategic Alternative Energy Foundation

United States - Israel Binational Science Foundation (BSF)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit

2. Ultra-low capacitance and high speed germanium photodetectors on silicon

3. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects

4. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current

5. Ultra-low capacitance and high speed germanium photodetectors on silicon

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2. Hot-Carrier Effect and Nanometer Metal Enabling Si-Based Mid-Infrared Detection Beyond 5μm of Wavelength;IEEE Photonics Journal;2024-06

3. Silicon (100) surface passivation-driven tuning of Ag film crystallinity and its impact on the performance of Ag/n-Si mid-infrared Schottky photodetector;APL Materials;2024-06-01

4. Design of a metasurface deflector for guided absorption enhancement in a Si PIN photodiode;Optics Express;2024-05-23

5. Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit;The Innovation;2024-05

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