Affiliation:
1. M.V. Lomonosov Moscow State University
Abstract
A locking range in a semiconductor ring laser (SRL) is theoretically
analyzed. The simplified model accounting for the specific features of
a SRL uses the carrier diffusion and the linewidth enhancement factor.
For stabilization of the steady-state bidirectional lasing, we
introduce in this model an active feedback loop that creates the
intracavity losses proportional to the intensity difference between
the counterpropagating waves. Frequency locking of the
counterpropagating waves in the region of stability of steady-state
bidirectional lasing is considered. Specific features inherent in the
locking range in a SRL are discussed. When backscattering coupling is
strong, the frequency locking of the counterpropagating waves does not
switch to a beat regime at any rotation rate. In the case of weak
backscattering coupling, analytical expressions for the locking range
are derived. It is shown that an active feedback loop has a strong
impact on a locking range. In a He-Ne laser, the locking range is
determined by dissipative backscattering, and there is no locking with
conservative scattering. Unlike a He-Ne laser, conservative
backscattering in a SRL has a strong impact on the locking range.
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering