Ion implanted photodiode detectors in epitaxial (Gax In_1-x) As
Author:
Publisher
The Optical Society
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The electrical properties of zinc implanted GaAs;Solid-State Electronics;1984-01
2. Formation of n-Layer in In0.53Ga0.47As by Si Implantation;Japanese Journal of Applied Physics;1982-07-20
3. ZnTe extrinsic photodetector for visible integrated optics;Journal of Applied Physics;1980-09
4. Optical Effects of Ion Implantation;Treatise on Materials Science and Technology;1980
5. Vapor‐phase epitaxial InxGa1−xAs on (100), (111)A, and (111)B InP substrates;Applied Physics Letters;1979-10-15
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