A high-precision study of excited-state transitions of shallow donors in semiconductors-Reference-Cited by-同舟云学术

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A high-precision study of excited-state transitions of shallow donors in semiconductors

Published:1977-07-01 Issue:7 Volume:67 Page:947
ISSN:0030-3941
Container-title:Journal of the Optical Society of America
language:en
Short-container-title:J. Opt. Soc. Am.

Author:

Skolnick M. S.,Carter A. C.,Couder Y.,Stradling R. A.

Publisher

The Optical Society

Subject

General Engineering

Reference14 articles.

1. Excited-state laser spectroscopy of the impurities in III–V and II–VI semiconductors

2. Optical Transitions between Excited States of Shallow Impurities in Germanium

3. Far-infrared spectroscopy of bound and free electrons in III-V and II-VI semiconductors. I. Transitions between excited states observed in Zeeman spectroscopy of the shallow donor impurities

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopy of shallow centers in semiconductors: Progress since 1960;Physica B+C;1987-09

2. Comment on the piezopolaron bound states in semiconductors;Journal of Physics and Chemistry of Solids;1987-01

3. The Spectroscopic Investigation of Negatively Charged Donor Ions (D¯ States);Disordered Semiconductors;1987

4. SPECTROSCOPY OF SHALLOW CENTERS IN SEMICONDUCTORS: PROGRESS SINCE 1960;Shallow Impurity Centers in Semiconductors;1987

5. FAR-INFRARED STUDIES AT INTERMEDIATE MAGNETIC-FIELDS WITH THE NEUTRAL SHALLOW DONORS IN GAAS AND INP OF TRANSITIONS NOT INVOLVING THE GROUND-STATE;Journal of Physics C: Solid State Physics;1986-10-30

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