Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells-Reference-Cited by-同舟云学术

Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells

Published:2018-08-07 Issue:17 Volume:26 Page:21736
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Peng Liyuan,Zhao Degang,Jiang Desheng,Zhu Jianjun,Liu Zongshun,Chen Ping,Yang Jing,Liu Wei,Liang Feng,Xing Yao,Liu Shuangtao,Zhang Liqun,Wang Wenjie,Li Mo,Zhang Yuantao,Du Guotong

Funder

Beijing Municipal Science and Technology Project

National Key R&D Program of China

National Natural Science Foundation of China (NSFC)

Science Challenge Project

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference27 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes

3. III-nitrides for energy production: photovoltaic and thermoelectric applications

4. Gallium nitride devices for power electronic applications

5. Piezo-Phototronic Effect Controlled Dual-Channel Visible light Communication (PVLC) Using InGaN/GaN Multiquantum Well Nanopillars

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