Wafer-based aberration metrology for lithographic systems using overlay measurements on targets imaged from phase-shift gratings-Reference-Cited by-同舟云学术

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Wafer-based aberration metrology for lithographic systems using overlay measurements on targets imaged from phase-shift gratings

Published:2014-04-15 Issue:12 Volume:53 Page:2562
ISSN:1559-128X
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

van Haver Sven,Coene Wim M. J.,D’havé Koen,Geypen Niels,van Adrichem Paul,de Winter Laurens,Janssen Augustus J. E. M.,Cheng Shaunee

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Reference8 articles.

1. New phase-shift gratings for measuring aberrations

2. Full optical column characterization of DUV lithographic projection tools

3. Lithographic scanner stability improvements through advanced metrology and control

4. Combined overlay, focus and CD metrology for leading edge lithography

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Zernike polynomials and their applications;Journal of Optics;2022-11-15

2. Spatially varying aberration calibration using a pair of matched periodic pinhole array masks;Optics Express;2019-01-09

3. Artificial Neural Network for Diffraction Based Overlay Measurement;IEEE Access;2016

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