Affiliation:
1. Mitsubishi Electric Corporation
2. Kyushu University
Abstract
This study presents high-responsivity graphene-based deep-ultraviolet (DUV) photodetectors using chemical vapor deposition (CVD)-hexagonal boron nitride (h-BN) photogating. To improve the DUV photoresponse, h-BN was used as a photosensitizer in graphene field-effect transistors (GFETs). The h-BN photosensitizers were synthesized using CVD and then transferred onto a SiO2/Si substrate. The behavior of h-BN irradiated with DUV light was investigated using cathodoluminescence and UV–VIS reflectance. Under 260 nm light, it exhibited a clear photoresponse with an ultrahigh responsivity of 19600 AW-1, which was 460% higher than a GFET device without h-BN photosensitizers. A noise equivalent power of 3.09×10−13 W/Hz1/2 was achieved.
Funder
Acquisition, Technology & Logistics Agency
Japan Society for the Promotion of Science
Subject
Electronic, Optical and Magnetic Materials
Cited by
8 articles.
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