Experimental modulation bandwidth beyond the relaxation oscillation frequency in a monolithic twin-ridge laterally coupled diode laser based on lateral mode locking-Reference-Cited by-同舟云学术

Experimental modulation bandwidth beyond the relaxation oscillation frequency in a monolithic twin-ridge laterally coupled diode laser based on lateral mode locking

Published:2002-03-01 Issue:5 Volume:27 Page:303
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Lamela H.,Roycroft B.,Acedo P.,Santos R.,Carpintero G.

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference12 articles.

1. Frequency response of 1.3µm InGaAsP high speed semiconductor lasers

2. 30 GHz bandwidth, 1.55 [micro sign]m MQW-DFB laser diode based on a new modulation scheme

3. Narrow-band modulation of semiconductor lasers at millimeter wave frequencies (<100 GHz) by mode locking

4. Modulation of twin-emitter semiconductor lasers beyond the frequency of relaxation oscillations

5. Small signal equivalent circuit of two lateral coupled semiconductor diode lasers

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