Author:
La Fontaine B.,White D. L.,MacDowell A. A.,Tan Z.,Tennant D. M.,Wood O. R.
Abstract
One of the major challenges facing the extreme ultraviolet (EUV) projection lithography program is realizing high resolution, diffraction limited imaging. Even though near diffraction-limited images have been obtained with different systems, at λ =14 nm1 and λ =42 nm2, a precise, quantitative characterization of the imaging capabilities of these cameras is still lacking. In this paper, we present a new test done at λ = 139Å that should provide very precise measurement of the aberrations and alignment errors of a multi-layer coated EUV camera.