Dark current reduction of Ge photodetector by GeO_2 surface passivation and gas-phase doping
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference30 articles.
1. High-performance Ge-on-Si photodetectors
2. New infrared detector on a silicon chip
3. High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers
4. High-quality Ge epilayers on Si with low threading-dislocation densities
5. Ultralow dark current Ge/Si(100) photodiodes with low thermal budget
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