Relaxation of the electro-optic response in thin-film lithium niobate modulators

Author:

Holzgrafe Jeffrey12ORCID,Puma Eric13,Cheng Rebecca1,Warner Hana1ORCID,Shams-Ansari Amirhassan1ORCID,Shankar Raji3,Lončar Marko1

Affiliation:

1. Harvard University

2. Currently HyperLight Corporation

3. The Charles Stark Draper Laboratory, Inc.

Abstract

Thin-film lithium niobate (TFLN) is a promising electro-optic (EO) photonics platform with high modulation bandwidth, low drive voltage, and low optical loss. However, EO modulation in TFLN is known to relax on long timescales. Instead, thermo-optic heaters are often used for stable biasing, but heaters incur challenges with cross-talk, high power, and low bandwidth. Here, we characterize the low-frequency (1 mHz to 1 MHz) EO response of TFLN modulators, investigate the root cause of EO relaxation and demonstrate methods to improve bias stability. We show that relaxation-related effects can enhance EO modulation across a frequency band spanning 1kHz to 20kHz in our devices – a counter-intuitive result that can confound measurement of half-wave voltage (V π ) in TFLN modulators. We also show that EO relaxation can be slowed by more than 104-fold through control of the LN-metal interface and annealing, offering progress toward lifetime-stable EO biasing. Such robust EO biasing would enable applications for TFLN devices where cross-talk, power, and bias bandwidth are critical, such as quantum devices, high-density integrated photonics, and communications.

Funder

National Science Foundation

Quantum Communication Channels for Fundamental Physics

Alliance for Quantum Technologies, California Institute of Technology

Natural Sciences and Engineering Research Council of Canada

Office of Naval Research

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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