Author:
Xiao Shudan,Yu Huabin,Jia Hongfeng,Wang Danhao,Sun Haiding
Abstract
An N-polar AlGaN-based DUV LED incorporating a tunnel junction, named N-TJ-LED, was proposed. Compared with the regular N-polar LEDs, the N-TJ-LEDs exhibited enhanced internal quantum efficiency, higher light output power, and dramatically reduced turn-on voltage.