A Telecommunication-Compatible, Bias-Free Photoconductive Terahertz Emitter on a Silicon Substrate

Abstract

We present a telecommunication-compatible, bias-free photoconductive terahertz emitter fabricated on an InAs layer grown on silicon, which provides significant enhancement in the radiated power above 0.5 THz compared to the state-of-the-art bias-free terahertz emitters.