Author:
Rothmayr Florian,Castro Edgar David Guarin,Hartmann Fabian,Knebl Georg,Schade Anne,Höfling Sven,Koeth Johannes,Pfenning Andreas,Worschech Lukas,Lopez-Richard Victor
Abstract
Resonant tunneling diode photodetectors with GaInAsSb absorbers appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We demonstrate how the drift, accumulation and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor’s electrical response.