Author:
Simmons Y. Lange,Dickson Killian,Ricks Amberly F.,Skipper Alec M.,Briggs Andrew F.,Muhowski Aaron J.,Bank Seth R.,Gopinath Juliet T.
Abstract
We characterized the impact of mechanically-applied biaxial strain on Auger recombination in InGaAs quantum wells using time-resolved photoluminescence. Our results support that Auger recombination is reduced by mechanical distortion introduced by strained-layer epitaxy.