Author:
Schreitmüller T.,Jeong H. W.,Esmaielpour H.,Mead C. E.,Ramsteiner M.,Schmiedeke P.,Thurn A.,Ajay A.,Matich S.,Döblinger M.,Lauhon L. J.,Finley J. J.,Koblmüller G.
Abstract
Performance limiting factors for GaAs(Sb)-AlGaAs nanowire (NW) lasers are unveiled by exploring the impact of impurity-induced point defects. Lasing properties show large tolerance to these defects which, however, limit radiative efficiency and lasing threshold beyond critical densities.