Author:
Malhotra Yakshita,Shen Yifan,Wu Yuanpeng,Hanish Josey,Guo Yifu,Xiao Yixin,Sun Kai,Norris Theodore,Mi Zetian
Abstract
Temperature and power dependent time-resolved photoluminescence measurements are performed on a novel ultra-stable red-emitting InGaN/GaN heterostructure. PL dynamics at two distinct wavelengths indicate a lateral carrier transfer from c-plane to semipolar-plane InGaN in the structure.