Photoemission properties of the variable component GaInAsSb heterojunction nanopillar array cathode

Abstract

The Ga x In1−xAs y Sb1−y heterojunction NPAs exhibit different properties depending on the material composition. Changing the Ga composition significantly affects the quantum efficiency and broadening of the heterojunction nanopillar array, while varying the As composition affects the peak position of its quantum efficiency. The quantum efficiency of the heterojunction is notably influenced by changes in the height of the top layer of the heterojunction, and when there is a difference in quantum efficiency between the two materials, the quantum efficiency of the heterojunction exhibits extremum values. Furthermore, external electric fields significantly affect the quantum efficiency of nanopillar arrays, providing important references and theoretical foundations for designing and optimizing resonantly enhanced GaInAsSb nanopillar array photonic cathodes.