Internal moisture barrier layer for improving high-humidity reliability of miniature light emitting diode die without encapsulation

Author:

Hsu Chia-Hsun,Luo Hai-Long,Li Shi-Tao1,Bian Fu-Qiang1,Chen Ya-Zhen1,Gao Peng2,Wu Wan-Yu3,Wuu Dong-Sing4,Lai Feng-Min5,Lien Shui-Yang5,Zhu Wen-Zhang

Affiliation:

1. Xiamen Silan Advanced Compound Semiconductor Co., Ltd.

2. Fujian Institute of Research on the Structure of Matter

3. National United University

4. National Chi Nan University

5. Da-Yeh University

Abstract

Atomic layer deposited Al2O3 films are incorporated into miniature light emitting diodes (mini-LEDs) as an internal moisture barrier layer. The experimental results show that the water vapor transmission rate reaches ≤10−4 g/m2/day when the Al2O3 thickness is ≥40 nm. The mini-LED with a 40 nm-thick Al2O3 layer shows negligible degradation after 1000 h of 85°C/85% relative humidity testing, whereas the device without an Al2O3 layer fails after only 500 h due to delamination occurring at the GaN surface. Current-voltage characteristics of the device without an Al2O3 moisture barrier layer indicate an increase in series resistance and ideality factor. This study provides a simple, light-weighting method to have a satisfactory encapsulation function for miniature LEDs.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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