Oxygen ion implanted channel optical waveguides in gallium arsenide

Abstract

Oxygen ion implantation into GaAs has been studied recently for the purpose of fabricating integrated optical waveguides in GaAs.1,2 It is reported for the first time that as-implanted GaAs exhibits an increase in refractive index of 0.1 to 0.2,1 which implies that the implanted layer can be utilized as the guiding layer for GaAs based waveguides. This paper demonstrates the realization of such an idea by the formation of planar channel waveguides using the novel technique of oxygen ion implantation.