Author:
Kowalski O. P.,McDougall S. D.,Marsh J. H.,Bryce A. C.,Ironside C. N.
Abstract
A novel quantum well intermixing (QWI) technique1 has been used to achieve substantial band gap shifts in the InGaAs-InAlGaAs material system enabling the first demonstration of monolithically integrated devices in this system. Wavelength tuned lasers have also been fabricated, displaying a tuning range up to 150 nm.