Carrier-induced fast wavelength switching in tunable V-cavity laser with quantum well intermixed tuning section-Reference-Cited by-同舟云学术

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Carrier-induced fast wavelength switching in tunable V-cavity laser with quantum well intermixed tuning section

Published:2015-09-29 Issue:20 Volume:23 Page:26336
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Zhang Xin,He Jian-Jun,Liu Neng,Dubowski Jan J.

Funder

Ministry of Science and Technology of the People's Republic of China (Chinese Ministry of Science and Technology)

National High-Tech R&D Program of China

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference15 articles.

1. Monolithic tunable diode lasers

2. Wavelength switchable semiconductor laser using half-wave V-coupled cavities

3. Widely wavelength switchable V-coupled-cavity semiconductor laser with ∼40 dB side-mode suppression ratio

4. Simple and compact V-cavity semiconductor laser with 50×100 GHz wavelength tuning

5. Disorder of an AlAs‐GaAs superlattice by impurity diffusion

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5. Demonstration of 1.3um wavelength range super structure grating DBR laser with wide wavelength tuning range of over 30 nm by introducing carrier confinement layers;Novel In-Plane Semiconductor Lasers XIX;2020-02-24

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