Comparative study of Al_xGa_1−xAs/GaAs photocathodes with different aluminum concentrations by surface photovoltage spectroscopy-Reference-Cited by-同舟云学术

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Comparative study of Al_xGa_1−xAs/GaAs photocathodes with different aluminum concentrations by surface photovoltage spectroscopy

Published:2015-09-30 Issue:28 Volume:54 Page:8473
ISSN:0003-6935
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Jiao GangCheng,Hu Canglu,Liu Jian,Qian Yunsheng

Funder

National Natural Science Foundation of China (NSFC)

Science and Technology on Low-Light-Level Night Vision Laboratory Foundation

The Research and Innovation Plan for Graduate Students of Jiang su Higher Education Institutions

Publisher

The Optical Society

Reference18 articles.

1. Selective Dry Etching of AlGaAs-GaAs Heterojunction

2. GaAs-AlGaAs quantum cascade lasers: physics, technology, and prospects

3. High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

4. Cesium‐Oxygen Activation of Three‐Five Compound Photoemitters

5. Negative electron affinity GaAs: A new source of spin‐polarized electrons

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical modeling and simulation-based assessment of graded-bandgap AlGaAs/GaAs electron-injection cathode;Ultramicroscopy;2020-12

2. Comparison of blue–green response between transmission-mode GaAsP- and GaAs-based photocathodes grown by molecular beam epitaxy;Chinese Physics B;2016-04

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