Research on quantum efficiency for reflection-mode InGaAs photocathodes with thin emission layer-Reference-Cited by-同舟云学术

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Research on quantum efficiency for reflection-mode InGaAs photocathodes with thin emission layer

Published:2015-09-24 Issue:28 Volume:54 Page:8332
ISSN:0003-6935
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Jin Muchun,Chen Xinlong,Hao Guanghui,Chang Benkang,Cheng Hongchang

Funder

National Natural Science Foundation of China (NSFC)

Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions

Publisher

The Optical Society

Reference16 articles.

1. Image intensifier tube (I2) with 1.06-μm InGaAs-photocathode

2. Photoemissive, Photoconductive, and Optical Absorption Studies of Alkali-Antimony Compounds

3. Operation of III‐V Semiconductor Photocathodes in the Semitransparent Mode

4. The application of semiconductors with negative electron affinity surfaces to electron emission devices

5. Attenuation performance of reflection-mode AlGaN photocathode under different preparation methods

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical Study on the Photoemission Performance of a Transmission Mode In0.15Ga0.85As Photocathode in the Near-Infrared Region;Molecules;2023-07-07

2. Enhancement of near-infrared response of InGaAs photocathode through interaction of 1064 nm light with activated surface;Applied Surface Science;2023-05

3. Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation;Chinese Physics B;2022-09-01

4. Enhancement of near-infrared response for GaAs-based photocathode with laminated graded-bandgap structure: theory and experiment;Journal of Materials Research and Technology;2022-07

5. InGaAs光电阴极制备工艺中的原位光电子能谱;Acta Optica Sinica;2022

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