Author:
Rogers Daniel,Xue Haotian,Kish Fred,Pezeshki Bardia,Tselikov Alex,Wierer Jonathan J.
Abstract
InGaN/GaN micro-light-emitting diodes with the highest bandwidths at very high temperatures (3.2 GHz at 290°C) are demonstrated. Differential carrier lifetime analysis is undertaken to understand recombination-related effects on the modulation response.
Cited by
1 articles.
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