Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon
Author:
Funder
Advanced Research Projects Agency - Energy
Institut Mines-Telecom
National Natural Science Foundation of China
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference29 articles.
1. A Review of High-Performance Quantum Dot Lasers on Silicon
2. Development of Quantum Dot Lasers for Data-Com and Silicon Photonics Applications
3. On quantum-dot lasing at gain peak with linewidth enhancement factor αH = 0
4. 1.3- $\mu$ m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon
5. Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed
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