Affiliation:
1. University of Chinese Academy of Sciences
2. Shanghai Industrial μTechnology Research Institute
Abstract
This paper presents the test
results for high-performance and high-uniformity waveguide
silicon-based germanium (Ge) photodetectors (PDs) for the O band and C band. Both wafer-scale and chip-scale
test results are provided. The
fabricated lateral p−i−n (LPIN) PDs exhibit a responsivity of
0.97 A/W at a bias of −2V, a bandwidth of 60 GHz, and a
no-return-to-zero (NRZ) eye diagram rate of 53.125 Gb/s.
Additionally, an average dark current of 22.4 nA was obtained
in the vertical p−i−n (VPIN) PDs at −2V by optimizing the doping process. The
device can reach an average responsivity of 0.9 A/W in the O band. The standard deviation in a
wafer with a dark current and responsivity is as low as 7.77 nA
and 0.03 A/W at −2V, respectively.
Funder
National Key Research and Development
Program of China
Strategic Pioneer Research Projects of
Defense Science and Technology