Microscopic optical nonlinearities and transient carrier dynamics in indium selenide nanosheet

Author:

Chen Chenduan12,Dong Ningning1234,Huang Jiawei54,Wang Zixin12,Wang Jun1234ORCID

Affiliation:

1. Institute of Optics and Fine Mechanics

2. University of Chinese Academy of Sciences

3. CAS Center for Excellence in Ultra-Intense Laser Science (CEULS)

4. Chinese Academy of Sciences

5. Songshan Lake Materials Laboratory

Abstract

This work systematically investigates the third-order nonlinear optical (NLO) properties and ultrafast carrier dynamics of layered indium selenide (InSe) obtained by mechanical exfoliation (ME). The two-photon absorption (TPA) effect of layered InSe was tested using micro-Z/I-scan techniques. The results indicate that InSe flakes undergo the TPA response under the excitation of both 520 nm and 1040 nm fs pulses, and that InSe is more likely to achieve TPA saturation under visible light excitation. Furthermore, ultrafast carrier dynamics revealed that InSe flakes in the visible region undergo a transition from photoinduced absorption to photobleaching and exhibit a fast recombination time of ∼0.4–1ps, suggesting a high optical modulation speed as high as ∼1–2.5 THz.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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