Fabrication of low-loss III-V Bragg-reflection waveguides for parametric down-conversion

Abstract

Entangled photon pairs are an important resource for many types of quantum protocols. Semiconductor Bragg-reflection waveguides are a promising photon-pair source due to mature fabrication, integrability, large transparency window in the telecom wavelength range, integration capabilities for electro-optical devices as well as a high second-order nonlinear coefficient. To increase performance, we improved the fabrication of Bragg-reflection waveguides by employing fixed-beam-moving-stage optical lithography, low-pressure, and low chlorine concentration etching, and resist reflow. The reduction in sidewall roughness yields a low optical loss coefficient for telecom wavelength light of αreflow = 0.08 (6) mm−1. Owing to the decreased losses, we achieved a photon-pair production rate of 8800 (300) (mW · s · mm)−1, which is 15-fold higher than in previous samples.