Affiliation:
1. Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
Abstract
In this work, GeSn resonant cavity enhanced (RCE) p–i–n photodetectors (PDs) with 3.7% Sn content in a GeSn layer were fabricated on a silicon on insulator (SOI) substrate. The gold (Au) layer and the deposited SiO2 layer constitute the bottom reflector and top reflector of the RCE detectors, respectively. The GeSn RCE PD has three resonant peaks and its responsivity is improved about 4.5 times at 1630 nm, compared with GeSn PDs without a gold bottom mirror. The cutoff wavelength of GeSn RCE PDs is up to 1820 nm, while it is only 1730 nm for GeSn PDs without a gold reflector. The responsivity of RCE PDs at 1630 nm reaches 0.126 A/W and 3‐dB bandwidth at about 36 GHz is achieved. These results indicate that the RCE structure is an effective approach for enhancing the GeSn PD performance operated at the L band.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Key Research Program of Frontier Science, Chinese Academy of Sciences
Subject
Atomic and Molecular Physics, and Optics
Cited by
3 articles.
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