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On-chip membrane-based GaInAs/InP waveguide-type p-i-n photodiode fabricated on silicon substrate

  • Published:2017-09-25 Issue:28 Volume:56 Page:7841
  • ISSN:1559-128X
  • Container-title:Applied Optics
  • language:en
  • Short-container-title:Appl. Opt.

Author:

Gu Zhichen,Uryu Tatsuya,Nakamura Nagisa,Inoue Daisuke,Amemiya Tomohiro,Nishiyama Nobuhiko,Arai Shigehisa

Funder

Japan Society for the Promotion of Science (JSPS)

Core Research for Evolutional Science and Technology (CREST)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of monolithic distributed Bragg reflector-integrated photodiode using a tapered waveguide with InP and polymer cladding layer;Optics & Laser Technology;2021-12

2. Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics;IEEE Transactions on Electron Devices;2021-07

3. Monolithic reflector-integrated waveguide photodetector with optical mesa isolation;Infrared Physics & Technology;2021-06

4. InP membrane integrated photonics research;Semiconductor Science and Technology;2020-01-01

5. Monolithically Reflector Integrated Waveguide Photodetector with Optically Isolation Mesa;Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC);2020
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