Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode-Reference-Cited by-同舟云学术

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Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode

Published:2017-05-25 Issue:16 Volume:56 Page:4646
ISSN:0003-6935
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Ke Shaoying,Lin Shaoming,Mao Danfeng,Ye Yujie,Ji Xiaoli,Huang Wei,Li Cheng,Chen Songyan

Funder

National Natural Science Foundation of China (NSFC)

National Basic Research Program of China (973 Program)

Publisher

The Optical Society

Reference25 articles.

1. Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth-product

2. Geiger-Mode Operation of Ge-on-Si Avalanche Photodiodes

3. Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm

4. The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room temperature operation of germanium–silicon single-photon avalanche diode;Nature;2024-02-21

2. Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region;Opto-Electronics Review;2024-01-03

3. Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers;Inorganics;2023-07-15

4. Lateral separate absorption charge multiplication Ge-on-Si avalanche photodiode with low dark current in linear mode;Optics Communications;2022-09

5. Germanium-on-silicon avalanche photodiode for 1550 nm weak light signal detection at room temperature;Chinese Optics Letters;2022

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