Infrared metasurface absorber based on silicon-based CMOS process

Abstract

Metasurface with metal-insulator-metal (MIM) structure has absorption properties for incident light at specific wavelengths. In this paper, we propose an infrared metasurface absorber based on silicon-based complementary metal oxide semiconductor (CMOS) process. By adding the prepared infrared metasurface absorber to the liquid crystal on silicon (LCoS) chip, it is used as the absorbing layer of LCoS configured between the pixel unit and the CMOS driver circuit. The effect of zero-order light caused by the gap between pixels in LCoS spatial light modulator (LCoS-SLM) on the light modulation function of the device is effectively reduced. Experiments show that the LCoS-SLM with infrared metasurface absorption structure can eliminate the zero-order light interference between the pixel gaps to a great extent and improve the modulation efficiency of the device. The proposed LCoS-SLM integrating infrared metasurface absorber structure based on silicon-based CMOS process has the advantages of low-cost and high modulation efficiency, which has high application value in the fields of holographic display, optical computing and optical communication.