Characterization of AZ PN114 resist for soft-x-ray projection lithography-Reference-Cited by-同舟云学术

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Characterization of AZ PN114 resist for soft-x-ray projection lithography

Published:1993-12-01 Issue:34 Volume:32 Page:7044
ISSN:0003-6935
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Early K.,Tennant D. M.,Jeon D. Y.,Mulgrew P. P.,MacDowell A. A.,Wood O. R.,Kubiak G. D.,Tichenor D. A.

Publisher

The Optical Society

Reference18 articles.

1. Reduction imaging at 14 nm using multilayer-coated optics: Printing of features smaller than 0.1 μm

2. A statistical analysis of ultraviolet, x-ray, and charged-particle lithographies

3. Reduction in x-ray lithography shot noise exposure limit by dissolution phenomena

4. A model for comparing process latitude in ultraviolet, deep-ultraviolet, and x-ray lithography

5. Percolation theory and resist development in x-ray lithography

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chain-Scission Polyethers for EUV Lithography;Journal of Photopolymer Science and Technology;2013

2. Chain-Scission Polyesters for EUV Lithography;Journal of Photopolymer Science and Technology;2010

3. Ultra-Thin Resists for Advanced Lithography;Journal of Photopolymer Science and Technology;2004

4. Fabrication of integrated circuits with high yield using ultra-thin resist processes;Advances in Resist Technology and Processing XX;2003-06-11

5. Integration of UTR processes into MPU IC manufacturing flows;SPIE Proceedings;2002-07-15

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