Optical spectroscopic investigation of m-plane GaN thin films-Reference-Cited by-同舟云学术

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Optical spectroscopic investigation of m-plane GaN thin films

Published:2014-08-22 Issue:9 Volume:4 Page:1920
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Mohanta Antaryami,Tzeng Yan-Zhi,Lee Meng-En,Ling Dah-Chin,Wang Ying-Chieh,Lo Ikai,Jang Der-Jun

Funder

National Science Council Taiwan (NSC)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Luminescence from stacking faults in gallium nitride

2. Defect-mediated surface morphology of nonpolar m-plane GaN

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

5. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of M-plane GaN thin films;Nonlinear Optics;2015

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