Broadband measurements of the refractive indices of bulk Gallium Nitride-Reference-Cited by-同舟云学术

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Broadband measurements of the refractive indices of bulk Gallium Nitride

Published:2014-06-02 Issue:7 Volume:4 Page:1287
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Bowman Steven R.,Brown Christopher G.,Brindza Michael,Beadie Guy,Hite Jennifer K.,Freitas Jaime A.,Eddy Charles R.,Meyer Jerry R.,Vurgaftman Igor

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Substrates for gallium nitride epitaxy

2. Transparency of GaN substrates in the mid-infrared spectral range

3. High-temperature hardness of bulk single-crystal gallium nitride - in comparison with other wide-gap materials

4. Measurement of second order susceptibilities of GaN and AlGaN

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1. Supercontinua from integrated gallium nitride waveguides;Optica;2024-08-20

2. Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE;Optical Materials;2024-06

3. Experimental characterization of the thermo-optic coefficient vs. temperature for 4H-SiC and GaN semiconductors at the wavelength of 632 nm;Scientific Reports;2023-06-23

4. Experimental characterization of the thermo-optic coefficient vs. temperature for 4H-SiC and GaN semiconductors at the wavelength of 632 nm;2023-03-31

5. Dislocation characterization in c-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique;Nanotechnology;2023-02-03

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