Abstract
This paper proposes a triple-frequency terahertz amplitude modulator that utilizes an I-shaped strip and four U-shaped metal patches within a common metal-substrate configuration. The top metal layer consists of an I-shaped strip and four U-shaped metal patches, while the bottom substrate layer is made of polyimide. Amplitude modulation is achieved through adjusting the plasma frequency of the high-electron-mobility transistors, resulting in a modulation depth of nearly 93% at resonance frequencies of 0.26 and 0.49 THz. At 0.6 THz, the modulation depth reaches 65%, demonstrating excellent performance. Resonance frequencies are determined by electric field and surface current distribution. The triple-frequency terahertz amplitude modulator is applicable in various fields, including terahertz communications and imaging.
Funder
National Natural Science Foundation of China
Chongqing Postdoctoral Science Foundation
Scientific and Technological Research Program of Chongqing Municipal Education Commission
Chongqing University of Posts and Telecommunications
College Students’ Innovation and Entrepreneurship Training Program of CQUPT